NTLJF3117P
TYPICAL SCHOTTKY PERFORMANCE CURVES (T J = 25 ° C unless otherwise noted)
10
10
1.0
T J = 85 ° C
T J = 125 ° C
T J = 25 ° C
1.0
T J = 85 ° C
T J = -55 ° C
T J = 125 ° C
T J = 25 ° C
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
V F , INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 13. Typical Forward Voltage
1.0E+0
100E-3
10E-3
T J = 125 ° C
1.0E+0
100E-3
10E-3
V F , MAXIMUM FORWARD VOLTAGE (VOLTS)
Figure 14. Maximum Forward Voltage
T J = 125 ° C
1.0E-3
100E-6
10E-6
1.0E-6
100E-9
T J = 85 ° C
T J = 25 ° C
1.0E-3
100E-6
10E-6
1.0E-6
100E-9
T J = 85 ° C
T J = 25 ° C
0
10
20
30
0
10
20
30
V R , REVERSE VOLTAGE (VOLTS)
Figure 15. Typical Reverse Current
ORDERING INFORMATION
V R , REVERSE VOLTAGE (VOLTS)
Figure 16. Maximum Reverse Current
Device
NTLJF3117PT1G
NTLJF3117PTAG
Package
WDFN6
(Pb-Free)
WDFN6
Shipping ?
3000 / Tape & Reel
3000 / Tape & Reel
(Pb-Free)
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
7
相关PDF资料
NTLJF3118NTBG MOSFET N-CH 20V 2.6A 6-WDFN
NTLJF4156NT1G MOSFET N-CH 30V 2.5A 6-WDFN
NTLJS1102PTBG MOSFET P-CH 8V 3.7A 6-WDFN
NTLJS2103PTAG MOSFET P-CH 12V 3.5A 6-WDFN
NTLJS3113PTAG MOSFET P-CH 20V 3.5A 6-WDFN
NTLJS3180PZTBG MOSFET P-CH 20V 3.5A 6-WDFN
NTLJS4114NT1G MOSFET N-CH 30V 3.6A 6-WDFN
NTLJS4149PTBG MOSFET P-CH 30V 4.6A SGL 6WDFN
相关代理商/技术参数
NTLJF3118N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Typical Uses for FETKY Devices
NTLJF3118NTAG 功能描述:MOSFET NFET 2X2 20V 3.8A 70MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTLJF3118NTBG 功能描述:MOSFET NFET 2X2 20V 3.8A 70MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTLJF4156N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Typical Uses for FETKY Devices
NTLJF4156NT1G 功能描述:MOSFET NFET 2X2 30V 4A 70MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTLJF4156NTAG 功能描述:MOSFET NFET 2X2 30V 4A 70MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTLJS1102P 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET −8 V, −8.1 A, COOL Single P−Channel, 2x2 mm, WDFN package
NTLJS1102PTAG 功能描述:MOSFET PFET WDFN6 8V 8.1A 36mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube